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MattsonTechnology’s new Helios 300 mm RTP system features
an advanced model-based temperature control that provides
exceptional uniformity, repeatability and reliability.
The system’s
outstanding spike anneal performance, with rapid ramp and
cool-down rates, provides the precise process
control required for ultra-shallow junction formation. The
Helios’ low-temperature control capability enables
processing at steady-state temperatures down
to 250°C and provides superior temperature uniformity
across the wafer, outperfoming next-generation
NiSi formation requirements.
Built on a modular, dual-chamber platform designed for ease
of maintenance and high reliability, the Helios includes
a dual-arm robot for increased throughput (over 120 wafers
per hour). The system
also features a contactless guard ring that entirely surrounds
the wafer to eliminate edge effects, thus providing 0 slip
line generation during processing.
The Helios’ excellent thermal
processing performance and temperature control, high productivity
and small footprint
offer significant cost-of-ownership advantages, making
it the ideal solution for chipmakers seeking a robust, cost-effective
RTP system to address the most demanding processing applications
for 90 nm and 65 nm device development and production.
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