Mature Products

 

SUPREMA®
The SUPREMA’s proprietary platform is based on a flexible, modular design that makes it ideal for both development and production environments, delivering superior productivity and reliability with a low cost of ownership. The SUPREMA combines an enhanced Faraday shield inductively coupled plasma source design and proprietary dual wafer processing. 

Product Features:

  • Faraday shield ICP plasma source
  • Configurable wafer pedestal:
    • Standard pedestal or ESC
    • Bias capability
  • Process flexibility with oxidizing, reducing and fluorinated chemistries
  • Full spectrum endpoint sensor option
  • Dual wafer processing with individual head control yields excellent process results and tool productivity
  • Independent vacuum loadlock and transfer, quad transfer arm robotics design provides high-throughput and flexibility

Highlights:

  • ICP Source Technology
    • Approximately 10,000 ICP sources operating worldwide
  • Process Capability to Bridge the Gap
    • Advanced strip for front-end-of-line (FEOL) applications
    • Film removal and surface treatment for back-end-of-line (BEOL) applications
    • Low temperature solutions for Wafer Level Packaging and CMOS Image Sensor applications
  • Production Proven, Low Cost of Ownership Solution
    • Multi-head / multi-chamber system architecture provides high-throughput, small footprint, and low operating cost

Applications:

  • FEOL / BEOL
    • Low Temp HDIS
    • PR or BARC Etch Back / Recess
    • Resist Strip on Low-k / ULK
    • Multiple Film Stack Removal
    • Tri-Layer Rework
    • SiN or SiC Barrier Removal
    • Descum
    • Post Etch Clean / Treatment
    • Metal Surface Treatment
  • Wafer Level Packaging
    • Dry Film Resist Etch
    • PR/DFR/BCB Descum
    • 3D IC PR Ash / Descum
    • Cu Passivation
    • PR/BCB Etch back
    • Polymide Etch
    • Pad and Line Clean
    • Residue Removal Prior tFilm Adhesion

 


Aspen™ III
The Aspen III delivers production proven and cost-effective strip and etch solutions through Mattson Technology’s proprietary Faraday shield inductively coupled plasma (ICP) technology. Aspen III is a 200 mm / 300 mm bridge tool and its exceptional platform design supports the technical challenges of special wafer handling including warped wafers and translucent wafers. The unique process chamber architecture accommodates multiple technology nodes requirements of the industry’s most demanding device manufacturers. 

Product Features:

  • Platform
    • 200 mm / 300 mm bridge tool capability
    • Glass / quartz / translucent wafer handling
    • Support warped wafer > 5 mm
    • Single or dual process chamber options
    • High speed robot and simultaneous multi-wafer handling with high-throughput
    • Vacuum loadlock isolates process chambers to minimize defects
    • More than 500 systems installed across a wide range of device manufacturers
  • ICPHT / Strip Process Chamber
    • Ndevice damage via soft plasma from proprietary Faraday shield ICP source
    • Process flexibility
    • Fluorine / reducing chemistry
    • Wide temperature range (100°C to 300°C)
    • Independent head control
    • Lower cost of consumables
  • Process
    • Bulk PR Strip
    • Implanted PR Removal
    • Surface Treatment / Descum
    • Polyimide Rework
  • LiteEtch Process Chamber
    • High concentration fluorine chemistry (> 5%) isotropic etch for contact clean application
    • Fluorine resistance chamber design
  • eHighlands / Etch and Strip Process Chamber
    • Bias capability delivers higher etch rate with minimum damage
    • Low Temperature (10°C t80°C) with TCU
    • Low Pressure (5 mT t300 mT)
  • FEOL / BEOL Process
    • PR Strip / Residue Removal
    • SiN / SiC Barrier Etch
    • Resist / BARC Etch Back
  • Wafer Level Packaging Process
    • Surface Treatment / Descum
    • 3D PR Strip

Applications:

  • Memory
  • Image Sensor
  • MEMS / Sensors
  • Wafer Level Packaging
  • Optoelectronics
  • Analog / Bipolar / Mixed Signal

Aspen™ II
First introduced in 1990, the Aspen II products provide proven process capability and cost of ownership benefits based on a highly reliable and productive product design for chipmakers in high volume manufacturing. Mattson Technology continues to innovate and support 200 mm strip and isotropic etch solutions for our customers. 

Product Features:

  • Aspen II inductively coupled plasma (ICP)
    • No device damage via soft plasma from proprietary Faraday shield ICP source
    • Process flexibility
      • Fluorine / reducing chemistry
      • Wide temperature range (100°C t300°C)
    • Dual wafer processing with individual head control provides excellent process uniformity
    • Vacuum loadlock isolates process chambers to minimize defects
    • High speed robot with simultaneous multi-wafer handling – high-throughput (> 130 wph)
    • Small footprint with highest throughput / square footprint in < 200 mm strip products
    • Lower cost of consumables compared with microwave source strip products
    • Single or dual process chamber option
    • Wafer size: 100 mm, 150 mm, 200 mm
  • Aspen II Silicon Soft Etch (SSE)
    • Isotropic etching for contact clean application

Highlights:

  • Production Proven Low Cost of Ownership Solution
    • More than 1,000 systems installed across a wide range of device manufacturers
  • Continuous Improvement Program
    • Continuous commitment to develop innovative CIPs to meet advanced processing requirements and factory automation requirements
  • Customer Support
    • Continuous commitment to support end-of-line / obsolescence management
    • Cost effective refurbishment service and re-manufacturing
    • Global customer support infrastructure
    • High fluorine (> 5%)

Applications:

  • Memory
  • Advanced Logic
  • LED
  • CMOS Sensor
  • MEMS (Gyroscope, Microphone)
  • Sensors
  • Wafer Level Packaging
  • Optoelectronics
  • Analog / BCD / Mixed Signal

Process:

  • Bulk PR Strip
  • Implanted PR Removal
  • Surface Treatment / Descum
  • Residue Cleaning
    • STI Etch Residue Clean
    • Poly Gate Residue Clean
    • Contact / VIA Residue Clean
    • Metal Residue Clean
  • Polyimide Rework / Treatment
  • Photo-lithography Rework
  • Passivation

Alpine®
Alpine provides cost effective, technology driven solutions in both advanced plasma strip and semi-critical etch applications. Based on proprietary Faraday shield inductively coupled plasma (ICP) source design, Alpine incorporates an electrostatic chuck with bias capability to provide independent control of ion energy and ion density. Coupled with Mattson’s production proven platform, Alpine delivers superior productivity and cost of ownership. 

Product Features:

  • Faraday shield ICP plasma source
  • Configurable wafer pedestal:
    • Standard pedestal or ESC
    • Bias capability
  • Process flexibility with oxidizing, reducing and fluorinated chemistries
  • Full spectrum endpoint sensor option
  • Dual wafer processing with individual head control yields excellent process results and tool productivity
  • Independent vacuum loadlock and transfer, quad transfer arm robotics design provides high-throughput and flexibility

Highlights:

  • ICP Source Technology
    • Approximately 10,000 ICP sources operating worldwide
  • Process Capability to Bridge the Gap
    • Advanced strip for front-end-of-line (FEOL) applications
    • Film removal and surface treatment for back-end-of-line (BEOL) applications
    • Low temperature solutions for Wafer Level Packaging and CMOS Image Sensor applications
  • Production Proven, Low Cost of Ownership Solution
    • Multi-head / multi-chamber system architecture provides high-throughput, small footprint, and low operating cost

Applications:

  • FEOL / BEOL
    • Low Temp HDIS
    • PR or BARC Etch Back / Recess
    • Resist Strip on Low-k / ULK
    • Multiple Film Stack Removal
    • Tri-Layer Rework
    • SiN or SiC Barrier Removal
    • Descum
    • Post Etch Clean / Treatment
    • Metal Surface Treatment
  • Wafer Level Packaging
    • Dry Film Resist Etch
    • PR/DFR/BCB Descum
    • 3D IC PR Ash / Descum
    • Cu Passivation
    • PR/BCB Etch back
    • Polymide Etch
    • Pad and Line Clean
    • Residue Removal Prior tFilm Adhesion

 


Helios®
Mattson Technology’s Helios product features an advanced model based temperature measurement and control system that provides the uniformity, repeatability and reliability required for achieving superior device performance for the most demanding applications. The excellent thermal processing performance and temperature control, high productivity and small footprint offers significant cost of ownership advantages, making it the ideal solution for chipmakers seeking a robust, cost-effective RTP system to address the most demanding processing applications.

Product Features:

  • Excellent Low Temperature Performance
    • Temperature range down to 200°C
    • Excellent profile control
    • Best ambient performance: < 1ppm
  • Superior Pattern Effect Suppression
    • Proven DTEC technology suppresses thermal related pattern effects for advanced technology nodes
  • Wafer Stress Reduction
    • Wafer heating from both sides for best stress management
    • Proactively addressing lithography alignment challenges
  • Platform
    • Dual chamber design
    • High speed dual arm robot with mechanical throughput > 140 wph
    • 2 x 300 mm load port
    • 6 kw halogen lamp for long life time
    • Temperature range 200°C – 1300°C
    • Superior ambient control below 1ppm O2
    • Process gas N2, Ar, O2, NH3

Highlights:

  • Process Flexibility
    • Wide process range for advanced application in one platform
    • Ultra-low temperature applications
    • High temperature activation
    • Pattern effect solution
  • Production proven Solution
    • More than 250 systems (over 500 process chambers) installed with this platform across a wide range of advanced memory and logic manufacturing

Applications:

  • Advanced Logic
  • 3D NAND Flash
  • Next generation DRAM
  • CMOS Image Sensor

Process:

  • Implant Activation
    • S/D Anneal
    • LDD Anneal
    • High K Anneal
    • Well Anneal
    • PLAD Anneal
  • Ultra-Shallow Junction Formation
  • Silicidation
    • Cobalt Silicide Formation
    • Nickel Silicide Formation
    • Titanium Silicide Formation
  • Substrate Engineering

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