In rapid thermal processing
(RTP), semiconductor wafers are rapidly heated to process
temperature, held for a few seconds, and rapidly cooled.
This thermal process is critical to achieve the exact electrical
parameters necessary for the integrated circuit to operate.
As the device geometries of integrated circuits continue
to shrink and the number of semiconductor wafers increases,
the need has grown for RTP equipment that can meet ever more
stringent processing demands, while maintaining uniformity
and repeatability to ensure the integrity of the integrated
circuit.
Mattson is one of the industry leaders in RTP technology.
Our products feature patented, dual-sided, lamp-based technology
that achieves good control, process uniformity and repeatability.
Our product line includes: the 2800 with over 500 units installed
worldwide, the 2800cs for compound semiconductor processing,
the 2900 for 200 mm applications, and the 3000 series for
300 mm fabrication and advanced steam applications.
We have enhanced the capability of our RTP systems with
innovations in temperature measurement and control. These
new temperature controllers provide our customers the ability
to extend their current technology to future device generations,
especially for device designs at and below 90 nm geometries.
Our RTP systems achieve first-rate process results on a
wide range of RTP applications, including:
Anneal
Silicide Formation
Oxidation: Dry, Wet and Selective
Ultra-Shallow Junction Formation (USJF)
Mattson is collaborating with Varian Semiconductor to develop
transistor formation technologies for 65 nm and smaller device
structures. The initial efforts of this development work
will be focused on ultra-shallow junction formation and will
be followed by additional activities aimed at furthering
the integration of front-end-of-line transistor fabrication
processing.
We plan to continue our efforts in developing innovative
RTP tools and bringing optimized, deep-submicron integrated
transistor formation processes to the marketplace.
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