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The Aspen II Strip uses the standard Aspen II platform together
with one or two processing chambers. Each chamber processes
two wafers at a time, with throughput ranging from 90
to 130 wafers per hour with one chamber and 110 to 160
wafers per hour with two chambers for most applications.
The system features Mattson Technology’s proprietary
inductively coupled plasma (ICP) source for low-damage processing.
The ICP source was designed to further extend the capability
for removal of the most difficult residues formed during
semiconductor processing. The tool effectively strips resist
and residue, reducing the need for post-strip chemical processing.
This reduced need for wet chemical steps decreases the number
of wet stations required, thereby further reducing cost of
ownership. The Aspen II Strip system offers advanced technology
on a high-throughput platform, providing process performance
and low cost of ownership advantages to chipmakers for advanced
device manufacturing.
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