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The Aspen III Strip is based on the standard Aspen III platform
together with one, two or three processing chambers. Each
chamber processes two wafers at a time, with throughput
greater than or equal to 200 wafers per hour with three
chambers for most applications. The innovative system design
exceeds the current throughput, cost of ownership and footprint
requirements set by industry consortia for 300 mm strip
equipment.
The Aspen III Strip system features Mattson Technology’s
proprietary inductively coupled plasma (ICP) source that
effectively strips resist and residue, reducing the need
for post-strip chemical processing. The ICP was designed
to further extend the capability for removal of the most
difficult residues formed during semiconductor processing.
The system achieves excellent results for high-dose implant
strip, residue removal and surface cleaning for advanced
applications, including low-k and oxygen and non-oxygen-based
processes. The Aspen III ICP Strip system offers advanced
technology on a high-throughput platform, providing process
performance and low cost of ownership advantages to chipmakers
for advanced device manufacturing.
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