Inductively Coupled Plasma for Highly Efficient and Low Damage Resist Stripping
Meeting Requirements for Dry Strip of High-Dose Implated Resist at the 45nm Node
Characterization of a Selectable-Mode Inductively Coulpled Plasma (ICPSM) Source for Advanced Dry Residue Removal Applications
Damage-Free, All-Dry Via. Etch Resist and Residue Removal Processes
Implementation of Plasma Processing into BEOL with Organic Low-k Dielectrics
Is Pore Sealing Key to Ultralow-k Adoption?
Process Integration of Photoresist Stripping, Barrier Removal and Copper Treatment for Advanced BEOL Applications
Resist Strip and Cu Diffusion Barrier Etch In Cu BEOL Integration Schemes in a Mattson Highlands Chamber
Study of Plasma-Induced Damage of Ultralow-k Dielectric Films During Photoresist Stripping
Using a Biased-ICP Reactor for PR Strip and Cu Barrier Removal
Using an ICP-Based Strip System to Perform Resist and Barrier-Layer Removal in Copper Low-k Processes
