Based on proprietary ICP source design with grounded Faraday shield, Aspen III delivers production proven and cost-effective strip and etch solutions to semiconductor manufacturers worldwide. The Aspen III’s exceptional platform design can handle both 200 mm and 300 mm wafers, and supports special wafer handling including warped and translucent wafers. The unique process chamber architecture can accommodate technical requirements across multiple technology nodes for the most demanding device manufacturers in the industry.
First introduced in 1990, the Aspen II is based on a highly reliable and productive system design. It provides proven process capabilities and cost of ownership benefits in high volume manufacturing to chipmakers worldwide.
Alpine is a cost effective, technology platform for both advanced plasma strip and semi-critical etch applications. Based on proprietary Faraday shield inductively coupled plasma (ICP) source design, Alpine incorporates an electrostatic chuck with bias capability to provide independent control of ion energy and ion density. Developed on a production proven platform, Alpine delivers superior productivity and cost of ownership.