Millisecond Anneal

The Millios millisecond anneal system is Mattson Technology’s solution for advanced transistor formation, dielectric passivation, metal silicides and other material surface annealing requiring an extremely short anneal time with precise control. Millios expands Mattson Technology’s philosophy of providing its customers leading edge technology with the highest system productivity.

Product Features:

  • Extended Processing Range
    • Intermediate temperatures from 250°C up to 1050°C
    • Temperature jump up to 600°C
    • Emissivities from 0.2 to 0.9
  • Process Flexibility
    • Pulse duration adjustment capability
    • Integrated spike and flash anneal
  • Platform
    • Single chamber design
    • Dual side heating mechanism
    • Process gas N2, O2, Ar
    • Mattson Technology’s Vortek® arc lamp system
    • Ambient control < 10ppm


  • Real-time Temperature Measurement Control
    • Front and backside temperature measurement
    • Front side temperature control during flash
    • Excellent temperature profile tuning
  • Wafer Stress Solution
    • Temperature profile shaping for minimized thermal stress
    • Optimized wafer handling
  • Production proven Solution
    • Throughput > 55 wph
    • Wafer breakage < 100 ppm


  • Advanced Logic
  • Next generation Memory


  • Advanced Transistor Formation
    • Ultra-Shallow Junction
    • S/D Anneal
    • Halo Anneal
    • High K Anneal
    • Post Silicidation Anneal
  • Advanced Silicidation
    • Nickel Silicide
    • Titanium Silicide