Plasma ETCH

Etching is the process of selectively removing mask patterned materials from the wafer’s surface to create desired patterns on the wafer’s surface. Plasma etch is the use of a radio frequency (RF) excited plasma to produce chemically reactive species from various gases. The reactive plasma is exposed to the wafer surface and etches away the material not protected by a masking layer.

Our plasma etch products are built on our high-throughput platform to provide high overall equipment efficiency. Our plasma etch products feature proprietary Faraday shielded inductively coupled plasma (ICP) source combined with etch bias control.

paradigmE® product family
Mattson Technology’s paradigmE product family of plasma dry etch systems provide logic and memory chipmakers leading edge conductor etch performance and the lowest cost of ownership in the industry. A proprietary inductively coupled plasma (ICP) source with Faraday shield and dual antenna design provides a unique independent control of ion energy and ion density with tunable radial power control.

Product Features:

  • Dual wafer chamber with independent process control
  • Dual chamber system with high speed quad arm vacuum robots, independent operation and maintenance of each process module
  • Dual RF, dual frequency ICP source for plasma uniformity tuning
  • Multi-zone temperature-control electrostatic chuck for CD uniformity tuning
  • Dual zone gas injection capability
  • Low device damage with ICP source design


  • Excellent on-wafer results
    • Patented ICP technology with Faraday shield technology provides true independent control of ion energy and ion density
    • Ultra-low ion energy for “soft landing” for advanced etch processes with minimal device damage
    • High etch rate
    • High selectivity
  • Extendibility
    • Flexibility to operate in ICP and CCP modes:  wide process window, board application space
  • Production proven capabilities
    • Minimal process kit erosion: the lowest cost of consumable
    • Modular system architecture:  maximum system utilization and productivity


  • Memory / Logic
    • Etch Back (Poly / ONO)
    • Spacer (SiN / Oxide / TEOS)
    • Spacer Defined Patterning: DPT
    • BARC Open
    • Multi-layer (Oxide / SiN)
    • Staircase Etch
    • Post Etch Treatment
  • CMOS Image Sensor
    • Lens Etch
    • Color Filter