Rapid Thermal Processing

RTP refers to a process that heats silicon wafers to high temperatures (up to 1200°C or greater) using high intensity lamps to set the electrical properties of the semiconductor devices.

Our thermal products now include a wide range of rapid anneals ranging from soak to spike to millisecond flash.

Our Helios family RTP systems offer unique double-side heating RTP technology. It can overcome pattern-loading effect problems associated with single-side radiative heating, and improve within-die temperature uniformity. In addition, Helios double-side heating RTP technology can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, leading to the highest system productivity while maintaining the lowest wafer stress at the same time.

Helios® XP

The Helios XP features an advanced temperature measurement and control system combined with an active compensation algorithm for different wafer emissivities. The Helios XP can fully satisfy technical requirements in manufacturing of different semiconductor devices across various technology nodes (130 nm to 5 nm and below). The Helios XP has also demonstrated high reliability, long mean-time-between-clean, and more than 20 to 30% benefit in overall cost of ownership in mass production. It is the ideal RTP system for advanced semiconductor development and manufacturing.

Product Features and Advantages:

  • Superior Solution for Pattern-Loading Effect
    • Wafer double-side heating coupled with proven DTEC control technology
    • Elimination of pattern-loading effect in RTP processes
  • Unique Wafer Stress Management Capabilities
    • Wafer double-side heating for best wafer stress management
    • Elimination of photo-lithography defocus issue related to single-side heating
  • Wide RTP Applications
    • 200°C to 1300°C temperature range, from ultra-low temperature NiSi anneal to ultra-high temperature wafer engineering
    • Best metal contamination performance for advanced logic device and CMOS sensor fabrication
    • Excellent ambient control capability, O2 < 1 ppm
    • High power incandescent lamp, long lifetime
  • High Productivity System Platform
    • Two process chambers
    • High speed wafer transfer
    • Small footprint

Product Applications:

  • Advanced logic, 3D NAND Flash Memory, DRAM
    • Post implant ion activation
    • S/D anneal
    • LDD anneal
    • Well anneal
    • PLAD anneal
    • High-k anneal
    • Ultra-shallow-junction formation
    • Metal silicide formation
    • Cobalt silicide formation
    • Nickel silicide formation
    • Titanium silicide formation
  • CMOS Sensor
    • Post implant ion activation
    • Ultra-shallow-junction formation
    • Metal silicide formation
  • Wafer Manufacturing
    • High temperature wafer substrate anneal

Helios® C200

The Helios C200 features an advanced temperature measurement and control system combined with an active compensation algorithm for different wafer emissivities. The Helios C200 can fully satisfy technical requirements in manufacturing of different semiconductor devices. It is the ideal RTP solution for 200 mm semiconductor development and manufacturing.

Product Features and Advantages:

  • Unique Wafer Stress Management Capabilities
    • Wafer double-side heating for best wafer stress management
    • RTP process for different substrate thickness
  • Superior Solution for Pattern-Loading Effect 
    • Wafer double-side heating coupled with proven DTEC control technology
    • Elimination of wafer-loading effect in RTP processes
  • Wide RTP Applications
    • 200°C – 1300°C temperature range, from ultra-low temperature NiSi anneal to ultra-high temperature wafer engineering
    • Best metal contamination performance for CMOS sensor fabrication
    • Excellent ambient control capability, O2 < 1 ppm
    • High power incandescent lamp, long lifetime
  • High Productivity System Platform
    • Two process chambers
    • High speed wafer transfer
    • Small footprint
    • More than 300 platforms installed worldwide

Product Applications:

  • Power IC, CMOS Sensor, MEMS, Logic, LED
    • Post implant ion activation
    • Ultra-shallow-junction formation
    • Metal silicide formation
    • High temperature anneal
  • Wafer Manufacturing
    • High temperature wafer substrate anneal