Rapid Thermal Processing

RTP refers to a process that heats silicon wafers to high temperatures (up to 1200°C or greater) using high intensity lamps to set the electrical properties of the semiconductor devices.

Our thermal products now include a wide range of rapid anneals ranging from soak to spike to millisecond flash.


Helios® XP
The Helios XP features an advanced temperature measurement and control system combined with an active compensation algorithm for different wafer emissivities. The Helios XP technology provides high reliability and 20 to 30% cost of ownership advantages, making it the ideal solution for chipmakers seeking a cost-effective RTP solution while meeting the needs for sub-65 nm (including sub-10 nm) device development and production.

Product Features:

  • Excellent Low Temperature Performance
    • Temperature range down to 200°C
    • Excellent profile control
    • Best ambient performance: < 1ppm
  • Superior Pattern Effect Suppression
    • Proven DTEC technology suppresses thermal related pattern effects for advanced technology nodes
  • Wafer Stress Reduction
    • Wafer heating from both sides for best stress management
    • Proactively addressing lithography alignment challenges
  • Platform
    • Dual chamber design
    • High speed dual arm robot with mechanical throughput > 140 wph
    • 2 x 300 mm load port
    • 6 kw halogen lamp for long life time
    • Temperature range 200°C – 1300°C
    • Superior ambient control below 1ppm O2
    • Process gas N2, Ar, O2, NH3

Highlights:

  • Process Flexibility
    • Wide process range for advanced application in one platform
    • Ultra-low temperature applications
    • High temperature activation
    • Pattern effect solution
  • Production proven Solution
    • More than 250 systems (over 500 process chambers) installed with this platform across a wide range of advanced memory and logic manufacturing

Applications:

  • Advanced Logic
  • 3D NAND Flash
  • Next generation DRAM
  • CMOS Image Sensor

Process:

  • Implant Activation
    • S/D Anneal
    • LDD Anneal
    • High K Anneal
    • Well Anneal
    • PLAD Anneal
  • Ultra-Shallow Junction Formation
  • Silicidation
    • Cobalt Silicide Formation
    • Nickel Silicide Formation
    • Titanium Silicide Formation
  • Substrate Engineering

Helios® XP 200
The Helios XP 200 features an advanced temperature measurement and control system combined with an active compensation algorithm for different wafer emissivities. The Helios XP technology provides high reliability and 20 to 30% cost of ownership advantages, making it the ideal solution for chipmakers seeking a cost-effective RTP solution while meeting the needs for sub-130 nm device development and production.

Product Features:

  • Excellent Low Temperature Performance
    • Temperature range down to 200°C
    • Excellent profile control
    • Best ambient performance
  • Superior Pattern Effect Suppression
    • Proven DTEC technology suppresses thermal related pattern effects for advanced technology nodes
  • Wafer Stress Reduction
    • Wafer heating from both sides for best stress management
    • Proactively addressing lithography alignment challenges
  • Platform
    • Dual chamber design
    • High speed dual arm robot with mechanical throughput > 140 wph
    • 200 mm interface with open cassette handling or SMIF handling
    • 6 kw halogen lamp for long life time
    • Temperature range 200°C – 1300°C
    • Superior ambient control below 1 ppm O2
    • Process gas N2, Ar, O2, NH3

Highlights:

  • Process Flexibility
    • Wide process range for advanced application in one platform
    • Ultra-low temperature applications
    • High temperature activation
    • Pattern effect solution
  • Production Proven Solution
    • More than 250 systems (over 500 process chambers) installed with this platform across a wide range of advanced memory and logic manufacturing
  • Wafer Size
    • 200 mm

Applications:

  • Power Device
  • Bipolar
  • Logic
  • LED
  • CMOS Sensor
  • MEMS

Process:

  • Implant Activation
    • o S/D Anneal
    • o Well Anneal
  • Ultra-Shallow Junction Formation
  • Silicidation
    • o Cobalt Silicide Formation
    • o Nickel Silicide Formation
    • o Titanium Silicide Formation
  • Substrate Engineering

 

 

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